電子情報通信学会ソサイエティ大会講演要旨
C-12-26
Wide Tuning-Range VCO Implementation with Helium-3 Irradiated Inductor
◎Hans Herdian・Haosheng Zhang・Atsushi Shirane・Kenichi Okada(Tokyo Tech)
This paper presents the realization of wide tuning-range VCO with helium-3 irradiated inductor used in the LC-tank. The VCO is implemented using AC-biased class-B cross-coupled architecture in CMOS 180nm process. After chip manufacturing, the inductor is irradiated by helium-3 ion with 1x1013 cm-2 concentration to increase the Q-factor and effective bandwidth. The VCO achieved 3.15GHz-4.05GHz (25%) tuning range and the helium-3 irradiated inductor leads to 1.3dB improvement in phase noise at 1MHz in 3.15GHz frequency compared to VCO that use non-irradiated inductor.