電子情報通信学会ソサイエティ大会講演要旨
C-3-25
25 Gbaud All-Silicon Low Driving Modulation and Low Bias Photodetection in Communication Band
○Haike Zhu・Kazuhiro Goi・Kensuke Ogawa(Fujikura)
We introduced a vertical PN junction embedded silicon device that can be used as either a modulator or a photodetector. Due to the specially designed "L" shape PN junction, high speed, low driving modulation together with high speed, low bias photodetection were confirmed by chip-level transmission of a 25-Gb/s NRZ-OOK signal.