電気学会全国大会講演要旨
3-128
MEMS加速度センサによるSub-1G検出の基礎検討
◎山根大輔(東京工業大学)・小西敏文・松島隆明(NTTアドバンステクノロジ)・年吉 洋(東京大学)・町田克之(NTTアドバンステクノロジ)・益 一哉(東京工業大学)
This paper presents a novel microelectromechanical systems (MEMS) accelerometers for sensing sub-1G (G = 9.8 m/s2) acceleration. The accelerometer has a high-density proof mass to suppress the Brownian noise that dominates the output noise of the sensor. The low-temperature (< 400 oC) electroplating process enables to integrate the accelerometer on the sensing CMOS circuit; a gold (19.3×103 kg/m3, 298 K) proof mass of 1020 μm × 1020 μm in area with the thickness of 12 μm has been found to suppress the measured noise floor to 0.78 μG/Hz1/2 at 300 K, which is nearly one order of magnitude smaller than those of the conventional MEMS accelerometers made of silicon (2.33×103 kg/m3, 298 K).